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| IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17445. Features * 1.5A, 500V * rDS(ON) = 7.000 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * High Input Impedance * 150oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER IRFU410 IRFR410 PACKAGE TO-251AA TO-252AA BRAND IFU410 IFR410 Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE) 4-401 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRFR410, IRFU410 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR410, IRFU410 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Rating (See Figure 5) (Note 4) . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 500 500 1.5 1.2 3.0 20 42 0.33 Refer to UIS Curve -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS BVDSS/TJ VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V Reference to 25oC, ID = 250A VGS = VDS, ID = 250A VDS = 500V, VGS = 0V VDS = 500V, VGS = 0V, TJ = 125oC MIN 500 TYP 0.61 MAX UNITS V V/oC Drain to Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current 2 0.5 - 7 10 24 15 9 1.1 5 210 30 7 4 25 250 100 7.000 12 1.4 7 - V A A nA S ns ns ns ns nC nC nC pF pF pF Gate to Source Leakage Current Drain to Source On Resistance (Note 3) Forward Transconductance (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS VGS = 20V ID = 1.5A, VGS = 10V, (Figure 9) VDS = 50V, IDS = 0.75A, (Figure 8) VDD = 250V, ID 1.5A, RGS = 24, RL = 167, MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID 1.5A, VDS = 0.8 x Rated BVDSS, (Figure 12) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 10) - 4-402 IRFR410, IRFU410 Electrical Specifications PARAMETER Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL LD TEST CONDITIONS Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S MIN - TYP 4.5 MAX - UNITS nH Internal Source Inductance LS - 7.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation - - 3.0 110 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN - TYP - MAX 1.5 3.0 UNITS A A G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: VSD trr TJ = 25oC, ISD = 1.5A, VGS = 0V, (Figure 11) TJ = 25oC, ISD = 1.5A, dISD/dt = 100A/s 130 - 2.0 520 V ns 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3) 4. VDD = 50V, starting TJ = 25oC, L = 40H, RG = 25, peak IAS = 1.5A. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 2.0 ID, DRAIN CURRENT (A) 0 50 100 150 1.5 0.8 0.6 0.4 0.2 0 1.0 0.5 0 25 50 TC, CASE TEMPERATURE (oC) 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 4-403 IRFR410, IRFU410 Typical Performance Curves Unless Otherwise Specified (Continued) ZJC, NORMALIZED TRANSIENT 1 THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-1 10-5 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) PDM t1 t2 NOTES: DUTY FACTOR D = t1/t2 TJ = PDM x ZJC x RJC + TC 1 10 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 10 TJ = MAX RATED, SINGLE PULSE TC = 25oC 5.0 IDM DRAIN CURRENT (A) 1 100s IAS, (A) 1ms STARTING TJ = 25oC STARTING TJ = 150oC 0.10 OPERATION IN THIS AREA LIMITED BY rDS(ON) 10ms DC 1.0 IF R = D tAV = (L)(IAS)/(1.3 RATED BVDSS - VDD) IF R D tAV = (L/R) IN [(IDS X R)/(1.3 RATED BVDSS - VDD) + 1] 0.01 1 10 100 DRAIN TO SOURCE VOLTAGE (V) 1000 0.5 0.5 0.010 0.100 tAV, TIME IN AVALANCHE (ms) 1 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING 3 VGS 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ID, DRAIN CURRENT (A) 3 VGS 10V 8.0V 7.0V 6.0V 1 5.5V 5.0V BOTTOM 4.5V TOP 1 ID, DRAIN CURRENT (A) 0.1 0.1 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 150oC 0.1 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 FIGURE 6. OUTPUT CHARACTERISTICS, TC = 25oC FIGURE 7. OUTPUT CHARACTERISTICS, TC = 150oC 4-404 IRFR410, IRFU410 Typical Performance Curves 3 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 30V 1 Unless Otherwise Specified (Continued) 25oC NORMALIZED DRAIN TO SOURCE ON RESISTANCE 7 8 3 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 1.5A, VGS = 10V 2 ID, DRAIN CURRENT (A) 150oC 1 0.1 3 4 5 6 0 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (oC) 160 VGS, GATE VOLTAGE (V) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 3 ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 0V 150oC 1 25oC 300 250 C, CAPACITANCE (pF) CISS 200 150 100 50 0 COSS CRSS 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 1.5A 18 VDS = 400V VDS = 250V VDS = 100V 12 8 4 0 0 1 2 3 456 7 8 9 10 11 12 13 14 15 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 12. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-405 IRFR410, IRFU410 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 14. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 15. SWITCHING TIME TEST CIRCUIT VDS (ISOLATED SUPPLY) FIGURE 16. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 17. GATE CHARGE TEST CIRCUIT FIGURE 18. GATE CHARGE WAVEFORMS 4-406 IRFR410, IRFU410 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-407 |
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